FOR 2093

B2: Nanostructure of materials for memristive switching

The chemical composition and the atomic structure of the smallest building units of novel memristive devices will be analysed by means of modern and state-of-the-art electron microscopy methods. This subproject delivers fundamental insight into the constitution of memristive devices, thus supporting the microstructural design of novel memristors. One of the main goals of the subproject will be the understanding of the interplay between microstructure and memristive switching, and thus the characterization of the switching mechanism. In this context, the research has been split into two intimately and synergistically linked parts. In case of ex-situ observations, the memristive devices are analysed before and after a variable number ofswitching processes. The structural and chemical changes occurring during memristive switching will be characterized quantitatively in order to identify unambiguously the fundamental switching process and potentially occurring fatigue mechanisms. Furthermore, novel sample holders will be adopted, which will be used to establish new in-situ microscopic methods for memristive materials. This novel approach makes highly reproducible electrical and microscopic data available, and, furthermore, opens ways for simultaneously performed in-situ heating experiments with excellent resolution. Thus, a time-resolved analysis of the morphological changes linked to memristive switching would be possible, including the characterization at intermediate stages, thereby understanding the time-resolved switching mechanisms of intermediate stages, thereby understanding the time-resolved switching mechanisms of novel  memristive devices.