FOR 2093

A2: Memristive and memsensor devices for filament free sparse CNT networks

Our novel experimental and theoretical results on horizontal and vertical memristive devices allow fundamental understanding and also reveal new application possibilities. Experiments and computer simulation strongly suggest that, in contrast to literature results, a limitation of Ag ion mobility (e.g. by transition from pure Ag to AgAu-alloy nanoparticles) is necessary to allow for filament free switching of memristive devices. Now, based on a well-characterized setup for metal cluster deposition of defined size and composition, we plan to get further insight into non-filamentary Ag ion transport within insulating matrixes, especially by in-situ studies, and to realize reliable memristive devices for sparse network applications. The focus will be put on non-oxidic matrices to rule out superimposed effects from oxygen defects. Beside the advantages for in-situ characterization, the horizontal geometry will be employed for a new memsensor application, a combination of memristors and sensors that could already be successfully demonstrated. To realize full circuits, we will design and investigate sparse CNT networks for several purposes: a) to contact memristive metal-oxide-sensors (memsensors) to simple neural networks, b) to form dedicated neural networks directly  by subsequent AgAu-cluster deposition, c) as an interconnection layer for memristive devices contacting the periphery of the network. The final goal will be a standalone decision making neural network responding to non-artificial input signals.