FOR 2093

New FOR2093 publication of subprojects A1, B2 & B1

Correlation between sputter deposition parameters and I-V characteristics in double-barrier memristive devices

The impact of the deposition process of double-barrier memristive devices (DBMDs) on the memristive switching behavior is investigated. Crucial parameters of the process plasma for thin film deposition, such as floating potential, electron temperature, and the energy flux to the substrate, are correlated with the I-V characteristics of the individual memristive devices. The results from plasma diagnostics are combined with transmission electron microscopy / electron energy loss spectroscopy (TEM / EELS) and kinetic Monte Carlo simulations. The obtained results may enable a new pathway for the development of plasma-engineered memristive devices tailored for specific application.