FOR 2093

New FOR2093 publication of subprojects B1 & A1

Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

Kinetic Monte Carlo simulation models are used to investigate resistive switching in HfO2 based RRAM devices. The models are consistently coupled to the electric field and different current transport mechanisms have been considered. The numerical results are in excellent agreement with experimentally obtained data. Important device parameters, which are difficult or impossible to measure in experiments, are calculated (e.g. shape of the conductive filament, width of filament constriction, current density, and temperature distribution)